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2SC3279 PDF预览

2SC3279

更新时间: 2024-09-14 14:52:59
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先科 - SWST 晶体管
页数 文件大小 规格书
2页 35K
描述
小信号晶体管

2SC3279 数据手册

 浏览型号2SC3279的Datasheet PDF文件第2页 
2SC3279  
NPN Silicon Epitaxial Planar Transistor  
for storobo flash and medium power amplifier  
applications.  
The transistor is subdivided into four groups L, M,  
N and P, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Value  
Unit  
30  
V
V
30  
10  
V
V
5
Collector Current (DC)  
2
A
Collector Current (Pulse Width = 10 ms)  
Base Current  
ICP  
5
0.2  
A
IB  
A
Power Dissipation  
Ptot  
750  
mW  
O
C
Junction Temperature  
Tj  
150  
O
C
Storage Temperature Range  
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 1 V, IC = 500 mA  
Current Gain Group  
L
hFE  
hFE  
hFE  
hFE  
hFE  
140  
200  
300  
420  
70  
-
-
-
-
240  
330  
450  
600  
-
-
-
-
-
-
M
N
P
at VCE = 1 V, IC = 2 A  
Collector Base Cutoff Current  
at VCB = 30 V  
Emitter Base Cutoff Current  
at VEB = 6 V  
Collector-Emitter Breakdown Voltage  
at IC = 10 mA  
Emitter Base Breakdown Voltage  
at IE = 1 mA  
Collector Emitter Saturation Voltage  
at IC = 2 A, IB = 50 mA  
Base Emitter Voltage  
at VCE = 1 V, IC = 2 A  
Collector Output Capacitance  
at VCB = 10 V, f = 1 MHz  
Transition Frequency  
at VCE = 1 V, IC = 0.5 A  
200  
ICBO  
IEBO  
-
-
-
-
0.1  
0.1  
-
µA  
µA  
V
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE  
10  
6
-
-
-
-
V
0.2  
0.86  
27  
150  
0.5  
1.5  
-
V
-
V
Cob  
-
pF  
MHz  
fT  
-
-
®
Dated : 20/01/2016 CL Rev: 01  

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