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2SC3255 PDF预览

2SC3255

更新时间: 2024-11-30 07:30:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 96K
描述
Silicon NPN Power Transistors

2SC3255 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3255  
DESCRIPTION  
·With TO-220 package  
·Complement to type 2SA1291  
·Low collector saturation voltage  
·High speed switching time  
APPLICATIONS  
·High current switching applications  
·Power amplifications  
·Invertrers ,converters  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
80  
UNIT  
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
60  
V
Open collector  
5
V
10  
A
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
12  
A
PC  
TC=25  
40  
W
Tj  
150  
-55~150  
Tstg  

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2SC3256Q ETC

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-218VAR
2SC3256R ETC

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-218VAR
2SC3256S ETC

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-218VAR