Datasheet > 2SC3149

2SC3149

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
3页	426K
描述
TO-220

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数据手册

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2SC3149 数据手册

2SC3149

BIPOLAR TRANSISTOR (NPN)

FEATURES

 High breakdown voltage(VCBO>900V)

 Wide safe Operating Area

 Fast switching speed

1 .BASE 2.COLLECTOR 3.EMITTER

TO-220

MECHANICAL DATA



Case: TO-220

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 2.30 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

900

800

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.5

Collector Power Dissipation

2.0

°C

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=1mA，I_E=0

I =5mA I =0

Collector-base breakdown voltage

V(BR)CBO

900

800

Collector-emitter breakdown voltage V(BR)CEO

，

V(BR)EBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=1mA，I_C=0

I_CBO

µA

V_CB=800V, I_E=0

I_EBO

µA V_EB=5V, I_C=0

V_CE=5V, I_C=100mA

V_CE=5V, I_C=200mA

DC current gain

h_FE*

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

1.0

1.5

I_C=200mA，I_B=40mA

VBE(sat)*

Transition frequency

Collector output capacitance

Turn-on time

f_T

Cob

ton

tstg

250

MHz V_CE=10V, I_C=-100mA

pF VCB=10V, IE=0, f=1MHz

μS

1.0

3.0

0.7

IC=1A,IB1=0.2A,IB2=-0.4A,

Storage time

μS

RL=400Ω,VCC=400V

Fall time

μS

*pulse test.

CLASSIFICATION OF h_FE

Rank

Range

10-20

15-30

20-40

1 / 3

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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