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2SC3138 PDF预览

2SC3138

更新时间: 2024-11-28 14:53:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ 开关光电二极管晶体管
页数 文件大小 规格书
4页 1758K
描述
SOT-23-3L

2SC3138 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23-3L Plastic-Encapsulate Transistors  
2SC3138  
TRANSISTOR (NPN)  
FEATURE  
SOT-23-3L  
z
z
z
Low current(max.50 mA)  
High voltage(max.200V )  
Telephony and professional communication equipment.  
MARKING:  
Equivalent Circuit  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RA TINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
200  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
200  
V
5
Collector Current -Continuous  
50  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
350  
RΘJA  
TJ,Tstg  
Thermal Resistance from Junction to Ambient  
Operation Junction and Storage Temperature Range  
357  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
200  
200  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100µA, IE=0  
IC=1mA, IB=0  
V
=0  
IE=100µA, IC  
V
5
VCB=200V, IE=0  
VEB=5V, IC=0  
0.1  
0.1  
240  
0.5  
1.5  
µA  
µA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
VCE=3V, IC=10mA  
IC=10mA, IB=1mA  
120  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
IC=10mA, IB=1mA  
VCE=10V,IC=2 mA,  
f=100MHz  
Transition frequency  
fT  
50  
MHz  
pF  
4
Collector output capacitance  
Cob  
VCB=10V, IE=0, f=1MHz  
www.jscj-elec.com  
1
Rev. - 2.2  

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