Datasheet > 2SC3112_07

2SC3112_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关音频放大器 PC
页数	文件大小	规格书
4页	460K
描述
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications

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2SC3112_07 数据手册

2SC3112

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3112

For Audio Amplifier and Switching Applications

Unit: mm

•

High DC current gain h

= 600~3600

High breakdown voltage: V

= 50 V

CEO

High collector current: I = 150 mA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

150

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

400

125

−55~125

JEDEC

JEITA

TO-92

stg

SC-43

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

0.1

μA

CBO

= 5 V, I = 0

EBO

(Note)

DC current gain

= 6 V, I = 2 mA

600

⎯

3600

Collector-emitter saturation voltage

Transition frequency

= 100 mA, I = 10 mA

⎯

100

⎯

0.12

250

3.5

0.25

⎯

CE (sat)

= 10 V, I = 10 mA

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

⎯

= 6 V, I = 0.1 mA, f = 100 Hz,

NF (1)

NF (2)

⎯

0.5

0.3

⎯

= 10 kΩ

Noise figure

= 6 V, I = 0.1 mA, f = 1 kHz,

= 10 kΩ

Note: h classification A: 600~1800, B: 1200~3600

2007-11-01

12 3 4

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