Datasheet > 2SC3072_05

2SC3072_05

更新时间： 2022-09-17 10:21:50

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器闪光灯
页数	文件大小	规格书
4页	156K
描述
Strobe Flash Applications Medium Power Amplifier Applications

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2SC3072_05 数据手册

2SC3072

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3072

Strobe Flash Applications

Unit: mm

Medium Power Amplifier Applications

•

High DC current gain

: h

= 140 to 450 (V

= 2 V, I = 0.5 A)

: h

= 70 (min) (V

= 2 V, I = 4 A)

•

Low collector saturation voltage

: V = 1.0 V (max) (I = 4 A, I = 0.1 A)

CE (sat)

High power dissipation

: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CES

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

JEDEC

JEITA

―

Collector current

Base current

Pulse

(Note 1)

TOSHIBA

2-7B1A

0.5

1.0

Weight: 0.36 g (typ.)

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2005-02-01

12 3 4

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