Datasheet > 2SC3072

2SC3072

更新时间： 2024-02-01 16:39:09

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	50K
描述
High DC current gain. Low collector saturation voltage. High power dissipation.

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技术参数
数据手册

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2SC3072 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	5 A	配置：	Single
最小直流电流增益 (hFE)：	300	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	10 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC3072 数据手册

Product specification

2SC3072

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Features

-0.2

High DC current gain.

Low collector saturation voltage.

High power dissipation.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current pulse *

Base current

I^CP

0.5

I^B

1.0

Collector power dissipation T^a= 25

T^c= 25

P^C

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

Emitter cut-off current

V^CB= 20 V, I^E= 0

V^EB= 8 V, I^C= 0

100

I^EBO

Collector-emitter breakdown voltage

V^(BR)CEOI^C= 10 mA, I^B= 0

140

V^CE= 2 V, I^C= 0.5A

h^FE

V^CE= 2 V, I^C= 4A

450

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

V^{CE (sat)}I^C= 4 A, I^B= 0.1 A

1.0

1.5

V^BE

f^T

V^CE= 2 V, I^C= 4 A

Transition frequency

V^CE= 2 V, I^C= 0.5 A

V^CB= 10 V, I^E= 0, f = 1 MHz

100

MHz

Collector output capacitance

C^ob

hFE Classification

C3072

Marking

Rank

hFE

140 240

200 330

300 450

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