Datasheet > 2SC3060

2SC3060

更新时间： 2024-11-11 07:30:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3060 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3060

DESCRIPTION

·With TO-3 package

·Ultra-fast switching

·Wide area of safe operation

·High breakdown voltage

APPLICATIONS

·Switching regulators

·Motor controls

·Ultrasonic oscillators

·Class C and D amplifiers

·Deflection circuits

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1200

850

Open collector

I_CP

Collector current-pulse

Base current

PW≤25µs,Duty cycle≤50%

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

175

-65~175

ꢀ

T_j

ꢀ

T_stg

12 3

中文翻译

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