Datasheet > 2SC304Q

2SC304Q

更新时间： 2023-12-06 20:03:31

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	289K
描述
功率三极管

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2SC304Q 数据手册

2SC304Q-HAF

NPN Silicon Epitaxial Planar Transistor

Features

• Low collector-emitter saturation voltage

• High collector current capability

• High collector current gain

• High efﬁciency due to less heat generation

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

Applications

• High-voltage DC-to-DC conversion

• High-voltage MOSFET gate driving

• High-voltage motor control

• High-voltage power switches (e.g. motors, fans)

• Automotive applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

5.2

Collector Current

Peak Collector Current, Pulsed

Total Power Dissipation

Junction Temperature

I_CM

10.4

P_D

0.7

℃

T_j

150

Storage Temperature Range

T_stg

- 65 to + 150

Thermal Characteristics

Symbol

R_θJA

Max.

179

Unit

Parameter

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 09/12/2022 Rev: 01

12 3 4 5

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