Datasheet > 2SC2983

2SC2983

更新时间： 2023-12-06 20:10:32

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1811K
描述
TO-252-2L

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中文翻译

获取价格

数据手册

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2SC2983 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistors

2SC2983 TRANSISTOR (NPN)

TO-252-2L

FEATURES

1. BASE

z High Transition Frequency

2. COLLECTOR

3. EMITTER

MARKING

2SC2983= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

2SC2983

XXXX

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

160

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.5

P_C

Collector Power Dissipation

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

125

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

160

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

I_C=1mA,I_E=0

V_(BR)CEO

I_C=10mA,I_B=0

V_(BR)EBO

I_CBO

I_EBO

I_E=1mA,I_C=0

V_CB=160V,I_E=0

μA

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=500mA

V_CB=10V,I_E=0, f=1MHz

V_CE=10V,I_C=100mA,

240

1.5

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

100

MHz

f_T

*Pulse test

CLASSIFICATION OF h_FE

RANK

RANGE

70-140

120-240

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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