Datasheet > 2SC2983

2SC2983

更新时间： 2024-11-18 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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2SC2983 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

2SC2983

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High Transiton Frequency: Ft=100MHz(TYP.)

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

160

1.5

Base Current

I^B

0.3

Total Power dissipation Ta = 25

T^C= 25

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

collector cutoff current

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

Unit

ìA

VCB=160V,IE=0

emitter cutoff current

VEB=5V,IC=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC current Gain

V^(BR)CEO

V^(BR)EBO

h^FE

IC=10mA,IB=0

160

IE=1mA,IC=0

VCE=5V,IC=100mA

IC=500mA,IB=50mA

VCE=5V,IC=500mA

V^CE=10V,IC=100mA

V^CB=10V.IE=0,f=1MHz

240

1.5

Collector-Emitter Saturation Voltage

Base- Emitter Voltage

V^CE(sat)

V^BE

Transition Frequency

100

MHz

Collector Output Capacitance

cob

hFE Classification

Marking

hFE

70 to 140

120 to 240

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