Datasheet > 2SC2982_15

2SC2982_15

更新时间： 2024-11-21 01:16:19

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC2982_15 数据手册

SMD Type

Transistors

NPN Transistors

2SC2982

■ Features

1.70 0.1

● Low saturation voltage

● Small flat package

● P

C = 1.0 to 2.0 W (mounted on a ceramic substrate)

● Complementary to 2SA1314

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

℃

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

Icp

500

150

Storage Temperature Range

Tstg

-55 to 150

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 1 mA， I = 0

Ic= 10 mA，I = 0

= 1mA， I = 0

CB= 30 V , I = 0

EB= 6V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector- Base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.5

1.2

1.5

600

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=2A, I

=50mA

0.2

C=2A, I

CE= 1V, I

= 2A

0.86

= 0.5A

= 2A

140

DC current gain

hFE

140

Collector output capacitance

Transition frequency

CB= 10V, I

=0,f=1MHz

CE= 1V, I = 0.5A

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SC2982-A

140-240

SA*

2SC2982-B

200-330

SB*

2SC2982-C

300-450

SC*

2SC2982-D

420-600

SD*

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