SMD Type
Transistors
NPN Transistors
2SC2982-HF
■ Features
1.70 0.1
● Low saturation voltage
● Small flat package
● P
C = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SA1314-HF
0.42 0.1
0.46 0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
30
V
Collector - Emitter Voltage
Emitter - Base Voltage
10
6
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
2
4
A
mW
℃
(Note.1)
Icp
P
C
500
T
J
150
Storage Temperature Range
Tstg
-55 to 150
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 1 mA, I = 0
Ic= 10 mA,I = 0
= 1mA, I = 0
CB= 30 V , I = 0
EB= 6V , I =0
Min
30
10
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector- Base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.5
1.2
1.5
600
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=2A, I
B
B
=50mA
=50mA
0.2
V
C=2A, I
V
BE
V
V
V
V
V
CE= 1V, I
CE= 1V, I
CE= 1V, I
C
C
C
= 2A
0.86
= 0.5A
= 2A
140
70
DC current gain
hFE
140
27
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E
=0,f=1MHz
pF
f
CE= 1V, I = 0.5A
C
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SC2982-A-HF 2SC2982-B-HF 2SC2982-C-HF 2SC2982-D-HF
140-240 200-330 300-450 420-600
SA* SB* SC* SD*
F
F
F
F
1
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