2SC2922

更新时间： 2024-01-02 21:46:24

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	166K
描述
Silicon NPN Power Transistors

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2SC2922 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2922

DESCRIPTION

·With MT-200 package

·Complement to type 2SA1216

APPLICATIONS

·Audio and general purpose

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

180

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

200

150

-55~150

℃

T_j

T_stg

12 3 4

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