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2SC2883OTE12L PDF预览

2SC2883OTE12L

更新时间: 2024-11-27 14:31:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 115K
描述
TRANSISTOR 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC2883OTE12L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.68
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
基于收集器的最大容量:40 pF集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzVCEsat-Max:2 V
Base Number Matches:1

2SC2883OTE12L 数据手册

 浏览型号2SC2883OTE12L的Datasheet PDF文件第2页浏览型号2SC2883OTE12L的Datasheet PDF文件第3页浏览型号2SC2883OTE12L的Datasheet PDF文件第4页 
2SC2883  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC2883  
Audio Frequency Amplifier Applications  
Unit: mm  
Suitable for output stage of 3 watts amplifier  
Small flat package  
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
P
C
Complementary to 2SA1203  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
30  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
I
1.5  
0.3  
500  
C
Base current  
I
B
P
P
C
C
Collector power dissipation  
mW  
PW-MINI  
JEDEC  
1000  
(Note 1)  
Junction temperature  
T
150  
°C  
°C  
j
JEITA  
SC-62  
2-5K1A  
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Weight: 0.05 g (typ.)  
1
2004-07-07  

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