Datasheet > 2SC2873

2SC2873

更新时间： 2024-11-06 06:24:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	64K
描述
Silicon PNP Epitaxial Type

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中文翻译

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数据手册

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2SC2873 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Type

2SC2873

Features

Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A).

High speed switching time: tstg = 1.0 s (typ.).

Small flat package.

PC = 1.0 to 2.0 W

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

I^B

0.4

P^C

500

Collector power dissipation

P^C*1

1000

150

Junction temperature

Storage temperature range

Tstg

-55 to +150

*1 Mounted on ceramic substrate (250 mm²X 0.8 t)

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与2SC2873相关器件

型号	品牌	获取价格	描述	数据表
2SC2873_04	TOSHIBA	获取价格	Power Amplifier Applications Power Switching Applications
2SC2873-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SC2873-O	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-O(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89
2SC2873O-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873TA	ZETEX	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC2873TA	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2873Y	TOSHIBA	获取价格	Power Amplifier Applications
2SC2873-Y	MCC	获取价格	NPN Silicon Epitaxial Transistors