Datasheet > 2SC2873

2SC2873

更新时间： 2024-11-06 05:56:07

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	219K
描述
NPN Silicon Epitaxial Planar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC2873 数据手册

2SC2873

NPN Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-89

FEATURES

Low saturation voltage

High speed switching time

Complementary to 2SA1213

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.40

1.40

0.35

0.52

1.60

0.41

P_C

500

150

-55-150

T_J

℃

5q TYP.

0.70 REF.

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C=10mA, I_B=0

V_(BR)EBOI_E=100μA , I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

V_CE(sat)

V_BE(sat)

f_T

V_CB=50V, I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V, I_C=0

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

240

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=1A, I_B=50mA

V_CE=2V, I_C=500mA

V_CB=10V, I_E=0, f=1MHz

0.5

1.2

120

MHz

Collector output capacitance

Turn on Time

C_ob

t_on

0.1

1.0

0.1

Switching Time

t_stg

V_CC=30V, I_C=1A, I_B1=-I_B2=0.05A

μs

Storage Time

Fall Time

t_f

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

120-240

Marking

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

08-May-2007 Rev. A

Page 1 of 3

12 3

中文翻译

下载PDF

与2SC2873相关器件

型号	品牌	获取价格	描述	数据表
2SC2873_04	TOSHIBA	获取价格	Power Amplifier Applications Power Switching Applications
2SC2873-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SC2873-O	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC2873-O(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),SOT-89
2SC2873O-G	COMCHIP	获取价格	General Purpose Transistor
2SC2873TA	ZETEX	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC2873TA	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2873Y	TOSHIBA	获取价格	Power Amplifier Applications
2SC2873-Y	MCC	获取价格	NPN Silicon Epitaxial Transistors