Datasheet > 2SC2859

2SC2859

更新时间： 2024-11-22 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	233K
描述
30V,0.5A,General Purpose NPN Bipolar Transistor

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2SC2859 数据手册

Product specification

Silicon Epitaxial Planar Transistor

2SC2859

FEATURES

Lead-free



Power dissipation：P_C=150mW.

Excellent h_FElinearity:h_FE(2)=25

(V_CE=6V,I_C=400mA).



Complementary to 2SA1182.

APPLICATIONS



Audio frequency general purpose amplifier applications.

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-23

2SC2859□

WO/WY/WG

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

500

℃

P_C

150

Junction and Storage Temperature

T_j,T_stg

-55 to +125

STM0024A

www.gmesemi.com

12 3 4

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与2SC2859相关器件

型号	品牌	获取价格	描述	数据表
2SC2859_07	TOSHIBA	获取价格	Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications
2SC2859_15	KEXIN	获取价格	NPN Transistors
2SC2859-G	KEXIN	获取价格	NPN Transistors
2SC2859GR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SC-59
2SC2859-GR	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO
2SC2859-GR(5LNLS,E	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
2SC2859GRTE85R	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC2859LT1	WINNERJOIN	获取价格	NPN EPITAXIAL SILICON TRANSISTOR
2SC2859O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SC-59
2SC2859-O	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO