Datasheet > 2SC2859

2SC2859

更新时间： 2024-11-26 14:53:55

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1529K
描述
双极型晶体管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC2859 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.5	DC current gain - Min：	70
DC current gain - Max：	400	Transition frequency：	300
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

2SC2859 数据手册

2SC2859

Silicon Epitaxial Planar Transistor

FEATURES

SOT-23

Min

Power dissipation：P_C=150mW.

Dim

Max

3.10

1.50

Excellent h_FElinearity:h_FE(2)=25

(V_CE=6V,I_C=400mA).

2.70

1.10

Complementary to 2SA1182.

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

APPLICATIONS

1.80

0.02

Audio frequency general purpose amplifier applications.

0.1 Typical

2.20

2.60

ORDERING INFORMATION

All Dimensions in mm

SOT-23

Type No.

2SC2859

Marking

Package Code

SOT-23

WO/WY/WG

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

500

℃

P_C

150

Junction and Storage Temperature

T_j,T_stg

-55 to +125

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100μA,I_E=0

I_C=1mA,I_B=0

I_E=100μA,I_C=0

V_CB=35V,I_E=0

V_EB=5V,I_C=0

0.1

μA

Emitter cut-off current

I_EBO

0.1

V_CE=1V,I_C=100mA

V_CE=6V,I_C=400mA

400

DC current gain

h_FE

Collector-emitter saturation voltage

I_C=100mA, I_B=10mA

V_CE(sat)

0.1

0.25

1.0

Base-emitter voltage

V_CE=1V, I_C=100mA

V_CB=6V,I_E=0,f=1MHz

V_BE

C_ob

0.8

Collector output capacitance

Transition frequency

V_CE=6V, I_C= 20mA

f_T

300

MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

120-240

200-400

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

下载PDF

与2SC2859相关器件

型号	品牌	获取价格	描述	数据表
2SC2859_07	TOSHIBA	获取价格	Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications
2SC2859_15	KEXIN	获取价格	NPN Transistors
2SC2859-G	KEXIN	获取价格	NPN Transistors
2SC2859GR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SC-59
2SC2859-GR	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO
2SC2859-GR(5LNLS,E	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
2SC2859GRTE85R	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SC2859LT1	WINNERJOIN	获取价格	NPN EPITAXIAL SILICON TRANSISTOR
2SC2859O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SC-59
2SC2859-O	TOSHIBA	获取价格	TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO