Datasheet > 2SC2785FF

2SC2785FF

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
JCST		/
页数	文件大小	规格书
3页	593K
描述
Transistor

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2SC2785FF 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

2SC2785 TRANSISTOR (NPN)

TO-92S

FEATURES

High voltage

1. EMITTER

Excellent h_FELinearity

Complementary to 2SA1175 PNP transistor

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Value

Units

Parameter

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.1

P_C

0.25

150

℃

T_J

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_EBO

V_CB=60V, I_E=0

V_EB=5V, I_C=0

0.1

600

μA

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=6V, I_C=1mA

110

DC current gain

V_CE=6V, I_C=0.1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

I_C=100mA, I_B=10mA

V_CE=6V, I_C=1mA

0.3

0.65

Transition frequency

f_T

V_CE=6V, I_C=10mA

150

MHz

Collector output capacitance

Noise figure

C_ob

V_CB=6V, I_E=0,f=1MHz

V_CE=6V, I_c=0.1mA,f=1KHZ, R_g=2KΩ

CLASSIFICATION OF h_FE(1)

Rank

250-400

300-600

110-180

135-220

170-270

200-320

Range

12 3

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