Datasheet > 2SC2785

2SC2785

更新时间： 2023-12-06 20:11:26

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	41K
描述
小信号晶体管

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2SC2785 数据手册

2SC2785

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into four groups, O, Y,

G and L, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

150

Collector Current

Power Dissipation

P_tot

250

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 6 V, I_C= 1 mA

Current Gain Group

h_FE

140

240

400

700

120

200

350

Collector Base Cutoff Current

at V_CB= 40 V

I_CBO

I_EBO

100

Emitter Base Cutoff Current

at V_EB= 3 V

100

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

Collector Emitter Breakdown Voltage

at I_C= 10 mA

Emitter Base Breakdown Voltage

at I_E= 10 µA

0.3

Collector Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

Gain Bandwidth Product

at V_CE= 6 V, I_C= 10 mA

300

2.5

MHz

Output Capacitance

at V_CB= 6 V, f = 1 MHz

C_ob

Dated：20/08/2016 Rev：02

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