Datasheet > 2SC2757

2SC2757

更新时间： 2024-09-21 06:25:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	73K
描述
isc Silicon NPN RF Transistor

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2SC2757 数据手册

INCHANGE Semiconductor

iscRF Product Specification

isc Silicon NPN RF Transistor

2SC2757

DESCRIPTION

·Low Noise

·High Current-Gain Bandwidth Product

APPLICATIONS

·Designed for use in VHF RF amplifier, local oscillator, mixer.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Power Dissipation

@T_C=25℃

P_C

0.15

125

T_J

Junction Temperature

℃

Storage Temperature Range

-55~125

T_stg

isc Website：www.iscsemi.cn

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型号	品牌	获取价格	描述	数据表
2SC2757-E	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC2757-F	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC2757-LE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757R	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757-T1BF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757-T2BE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757-T2BF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2757T33	ISC	获取价格	Transistor
2SC2757T34	ISC	获取价格	Transistor