Datasheet > 2SC2714

2SC2714

更新时间： 2023-12-06 20:09:08

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1080K
描述
双极型晶体管

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2SC2714 数据手册

2SC2714

Silicon Epitaxial Planar Transistor

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

Small reverse transfer capacitance:

2.70

1.10

Cre=0.7pF(Typ.)

1.0 Typical

0.4 Typical

Low noise Figure:NF=2.5dB(Typ.)

f=100MHz

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

0.1 Typical

High frequency amplifier applications

2.20

2.60

FM,RF,MIX,IF Amplifier applications

All Dimensions in mm

ORDERING INFORMATION

SOT-23

Type No.

Marking

Package Code

SOT-23

2SC2714

QR/QO/QY

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Base current

℃

I_B

Collector Dissipation

P_C

100

Junction and Storage Temperature

T_j,T_stg

-55 to+125

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100μA,I_E=0

I_C=1mA,I_B=0

MIN

TYP

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=100μA,I_C=0

V_CB=18V,I_E=0

V_EB=4V,I_C=0

0.5

200

0.3

μA

I_EBO

DC current gain

h_FE

V_CE=6V,I_C=1mA

Collector-emitter saturation voltage

Transition frequency

I_C=10mA, I_B=1mA

V_CE(sat)

f_T

MHz

V_CE=6V, I_C= 1mA

550

0.7

2.5

Output capacitance

V_CB=6V, I_E=0,f=1MHz

V_CE=6V,I_E=-1mA,f=100MHz

C_ob

Noise Figure

CLASSIFICATION OF h_FE(1)

Rank

Range

40-80

70-140

100-200

Marking

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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