SMD Type
Transistors
NPN Transistors
2SC2713
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High voltage: VCEO = 120 V
● High hFE: hFE = 200~700
● Low noise: NF = 1dB (typ.), 10dB (max)
● Small package
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
● Complementary to 2SA1163
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
120
120
5
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
BaseCurrent
I
C
100
20
mA
mW
℃
I
B
Collector Power Dissipation
Junction Temperature
P
C
150
125
T
J
Storage Temperature Range
T
stg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
120
120
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA, I = 0
= 100μA, I = 0
CB= 120 V , I = 0
EB= 5V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
100
100
0.3
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=10 mA, I
B
=1mA
=1mA
V
C
=10 mA, I
B
1.2
hFE
V
CE= 6V, I
C= 2mA
200
700
V
CE = 6 V, I
= 10 kΩ
C
= 0.1 mA ,f=1KHz
Noise figure
NF
1
10
dB
RG
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 6V, I
E
= 0,f=1MHz
3
pF
f
C
= 1mA
100
MHz
■ Classification of hfe
Type
Range
Marking
2SC2713-G
200-400
DG
2SC2713-L
350-700
DL
1
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