Datasheet > 2SC2710-Y(F)

2SC2710-Y(F)

更新时间： 2024-09-23 18:27:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	194K
描述
Small Signal Bipolar Transistor

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中文翻译

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技术参数
数据手册

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2SC2710-Y(F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

2SC2710-Y(F) 数据手册

2SC2710

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2710

For Audio Amplifier Applications

Unit: mm

•

High DC current gain: h

= 100~320

FE (1)

Complementary to 2SA1150

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

800

°C

Base current

160

Collector power dissipation

Junction temperature

Storage temperature range

300

150

stg

−55~150

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 35 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

0.1

⎯

μA

CBO

Emitter cut-off current

= 5 V, I = 0

EBO

(BR) CEO

Collector-emitter breakdown voltage

I = 10 mA, I = 0

C B

FE (1)

(Note)

= 1 V, I = 100 mA

100

⎯

320

DC current gain

= 1 V, I = 700 mA

⎯

0.5

0.8

⎯

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= 500 mA, I = 20 mA

CE (sat)

= 1 V, I = 10 mA

0.5

⎯

Transition frequency

= 5 V, I = 10 mA

120

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

⎯

Note: h

classification O: 100~200, Y: 160~320

FE (1)

2007-11-01

12 3

中文翻译

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