Datasheet > 2SC2706

2SC2706

更新时间： 2024-11-18 06:16:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	122K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC2706 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2706

DESCRIPTION

·With TO-3P(I) package

·High power dissipation

APPLICATIONS

·For audio power amplifier and general

purpose applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3P(I)) and symbol

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

140

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

150

-55~150

ꢀ

T_j

T_stg

ꢀ

12 3

中文翻译

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