5秒后页面跳转
2SC2688 PDF预览

2SC2688

更新时间: 2024-11-19 14:54:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 378K
描述
TO-126

2SC2688 数据手册

 浏览型号2SC2688的Datasheet PDF文件第2页浏览型号2SC2688的Datasheet PDF文件第3页浏览型号2SC2688的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-126 Plastic-Encapsulate Transistors  
2SC2688 TRANSISTOR (NPN)  
TO-126  
FEATURES  
Color TV chroma out pupt circuits  
1. EMITTER  
2. COLLECOTR  
3. BASE  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
C2688,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ  
Solid dot= Green molding compound  
device, if none, the normal device  
//,ode  
C2688  
XX  
ORDERING INFORMATION  
Part Number  
Package  
TO-126  
TO-126  
Packing Method  
Pack Quantity  
200pcs/Bag  
60pcs/Tube  
2SC2688  
Bulk  
2SC2688-TU  
Tube  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Value  
300  
Unit  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
V
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
5
V
Collector Current -Continuous  
200  
mA  
W
Pc  
Power Power dissipation  
1.25  
-55-150  
Operation Junction and Storage Temperature Range  
TJ,Tstg  
www.jscj-elec.com  
1
Rev. - 2.0  

与2SC2688相关器件

型号 品牌 获取价格 描述 数据表
2SC2688_11 UTC

获取价格

NPN SILICON TRANSISTOR
2SC2688_15 UTC

获取价格

NPN SILICON TRANSISTOR
2SC2688-AZ RENESAS

获取价格

2SC2688-AZ
2SC2688G-K-T60-K UTC

获取价格

Transistor
2SC2688G-K-T6C-K UTC

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SC2688G-L-T60-K UTC

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SC2688G-L-T6C-K UTC

获取价格

Transistor
2SC2688G-M-T60-K UTC

获取价格

Transistor
2SC2688G-M-T6C-K UTC

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SC2688G-N-T60-K UTC

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast