Datasheet > 2SC2668

2SC2668

更新时间： 2023-12-06 20:08:28

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	617K
描述
双极型晶体管

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数据手册

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2SC2668 数据手册

2SC2668

TO-92S Transistor (NPN)

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

1 2 3

Features

Small reverse transfer capacitance

Low Noise Figure

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

V_CEO

V_EBO

I_C

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

200

150

-55-150

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=100μA, I_C=0

V_CB=40V, I_E=0

V_EB=4V, I_C=0

μA

0.5

200

I_EBO

h_FE

V_CE=6V, I_C=1mA

V_CE=6V, f=1MHz

Reverse Transfer Capacitance

Collector-Base Time Constant

Transition frequency

C_re

0.7

Cc·rbb’

f_T

_CE=6V, I_E=-1mA, f=30MHz

MHz

V_CE=6V, I_C=1mA

550

Power Gain

Gpe

V_CC=6V, I_C=1mA, f=100MHz

Noise figure

CLASSIFICATION OF h_FE

Rank

40-80

70-140

100-200

Range

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Revision:20170701-P1

mail:lge@lgesemi.com

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