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2SC2618RCTL PDF预览

2SC2618RCTL

更新时间: 2024-01-13 14:34:20
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 91K
描述
500mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SC2618RCTL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.39Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SC2618RCTL 数据手册

 浏览型号2SC2618RCTL的Datasheet PDF文件第2页浏览型号2SC2618RCTL的Datasheet PDF文件第3页浏览型号2SC2618RCTL的Datasheet PDF文件第4页浏览型号2SC2618RCTL的Datasheet PDF文件第5页浏览型号2SC2618RCTL的Datasheet PDF文件第6页 
Preliminary Datasheet  
R07DS0273EJ0300  
(Previous: REJ03G0702-0200)  
Rev.3.00  
2SC2618  
Silicon NPN Epitaxial  
Application  
Mar 28, 2011  
Low frequency amplifier  
Complementary pair with 2SA1121  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
1. Emitter  
2. Base  
3
3. Collector  
1
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
Ratings  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
35  
35  
V
4
500  
V
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
PC  
150  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
R07DS0273EJ0300 Rev.3.00  
Mar 28, 2011  
Page 1 of 4  

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