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2SC2613 PDF预览

2SC2613

更新时间: 2024-11-18 06:19:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 145K
描述
Silicon NPN Power Transistors

2SC2613 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2SC2613 数据手册

 浏览型号2SC2613的Datasheet PDF文件第2页浏览型号2SC2613的Datasheet PDF文件第3页浏览型号2SC2613的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2613  
DESCRIPTION  
·With TO-220 package  
·High collector breakdown voltage  
: VCEO=400V(Min)  
APPLICATIONS  
·For high voltage ,high speed and  
high power switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
500  
400  
7
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
5
A
ICM  
Collector current-peak  
Base current  
10  
A
IB  
2.5  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
40  
W
Tj  
150  
-55~150  
Tstg  

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