Datasheet > 2SC2611

2SC2611

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	238K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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2SC2611 数据手册

SMD Type

Transistors

NPN Power Transistor

C2611

SOT-89

Unit: mm

+0.1

4.50_-0.1

1.50_-0.1

■ Features

+0.1

1.80_-0.1

●

Collector-emitter Voltage: V(BR)CEO=400V

●

Collector Current: IC=0.2A

0.53_-0.1

+0.1

0.48_-0.1

0.44_-0.1

1. Base

+0.1

3.00_-0.1

2. Collector

3. Emiitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

600

400

Collector Current -Continuous

Collector Dissipation

0.2

0.5

150

℃

Junction Temperature

Storage Temperature

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

600

400

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base Breakdown voltage

Collector-base cut-off current

Emitter cut-off current

V(BR)CBO IC = 100μA , IE = 0

V(BR)CEO IC = 1mA , IB = 0

V(BR)EBO IE = 100μA , IC = 0

ICBO

IEBO

VCB = 600V , IE = 0

VEB=7V,IC=0

100

μA

VCE = 20V , IC = 20mA

VCE = 10V , IC = 0.25mA

DC current gain

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Fall time

VCE(sat) IC= 50mA, IB= 10 mA

VBE(sat) IC= 50mA, IB= 10 mA

0.5

1.2

0.3

1.5

IB1=-IB2=5mA, IC=50mA, VCC=45V

VCE = 20 V , IC = 20 mA , f = 1 MHz

μs

Storage time

μs

Transition frequency

MHz

■ hFE Classification

Rank

hFE

10～15 15～20 20～25 25～30 30～35 35～40

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