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2SC2590 PDF预览

2SC2590

更新时间: 2024-11-18 05:56:27
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 129K
描述
Silicon NPN Power Transistors

2SC2590 数据手册

 浏览型号2SC2590的Datasheet PDF文件第2页浏览型号2SC2590的Datasheet PDF文件第3页浏览型号2SC2590的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2590  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2SA1110  
·Excellent current IC characteristics of forward  
current transfer ratio hFE vs. collector  
·High transition frequency fT  
·Optimum for the driver stage of a  
40 W to 60 W output amplifier  
APPLICATIONS  
·For low-frequency power amplification  
PINNING  
PIN  
DESCRIPTION  
1
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
120  
UNIT  
V
V
V
A
A
W
Open base  
120  
Open collector  
5
Collector current (DC)  
Collector current-Peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
0.5  
ICM  
1.0  
PC  
TC=25ꢀ  
1.2*  
150  
Tj  
-55~150  
Tstg  
Note) *: Without heat sink  

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