Datasheet > 2SC2502

2SC2502

更新时间： 2024-11-23 06:18:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC2502 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2502

DESCRIPTION

·With TO-220C package

·High breakdown voltage

·High speed switching time

APPLICATIONS

·For use in high-voltage,high-speed ,power

switching in inductive circuit.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

500

Open base

400

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction case

MAX

UNIT

R_{th j-C}

2.5

℃/W

12 3

中文翻译

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与2SC2502相关器件

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2SC2504	ETC	获取价格	2SC2504
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2SC2509	TOSHIBA	获取价格	SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510	TOSHIBA	获取价格	TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)
2SC2510A	TOSHIBA	获取价格	SILICON NPN EPITAXIAL PLANAR TYPE
2SC2512	HITACHI	获取价格	Silicon NPN Triple Diffused
2SC2512RF	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC2512RR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC2512TZ	HITACHI	获取价格	暂无描述