JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2500 TRANSISTOR (NPN)
TO-92L
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
Strobe Flash Applications
Medium Power Amplifier Applications
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
30
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
10
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
2
900
A
PC
mW
TJ
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
30
10
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
V
V
ICBO
IEBO
VCB=30V,IE=0
0.1
0.1
µA
µA
Emitter cut-off current
VEB=6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V,IC=500mA
VCE=1V,IC=2A
140
70
600
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IC=2A,IB=50mA
VCE=1V,IC=2A
0.5
1.5
V
V
Transition frequency
fT
VCE=1V,IC=500mA
VCB=10V,IE=0,f=1MHz
150
27
MHz
pF
Collector output capacitance
CLASSIFICATION OF hFE(1)
Cob
Rank
A
B
C
D
Range
140-240
200-330
300-450
420-600
A,Jun,2011