Datasheet > 2SC2500

2SC2500

更新时间： 2024-11-20 14:50:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	619K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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2SC2500 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	10
Collector Current - Continuous：	2	DC current gain - Min：	140
DC current gain - Max：	600	Transition frequency：	150
Package：	TO-92MOD	Storage Temperature Range：	-55-150
class：	Transistors

2SC2500 数据手册

2SC2500

TO-92L Transistor (NPN)

TO-92L

4.700

5.100

1. EMITTER

2. COLLECTOR

3. BASE

7.800

8.200

0.600

0.800

0.350

0.550

13.800

14.200

Features

1.270 TYP

2.440

2.640

Strobe flash applications

Medium power amplifier applications

0.000

1.600

0.300

0.350

0.450

3.700

4.100

1.280

1.580

4.000

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

900

P_C

T_J

150

℃

T_stg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

V_CB=30V,I_E=0

0.1

µA

Emitter cut-off current

V_EB=6V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V,I_C=500mA

V_CE=1V,I_C=2A

140

600

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

I_C=2A,I_B=50mA

V_CE=1V,I_C=2A

0.5

1.5

Transition frequency

f_T

V_CE=1V,I_C=500mA

V_CB=10V,I_E=0,f=1MHz

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

C_ob

Rank

Range

140-240

200-330

300-450

420-600

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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