2SC2458
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458
Audio Amplifier Applications
Unit: mm
•
•
•
•
•
•
High current capability: I = 150 mA (max)
C
High DC current gain: h
= 70~700
FE
Excellent h
linearity: h
(I = 0.1 mA)/h
C
(I = 2 mA) = 0.95 (typ.)
FE C
FE
FE
Low noise: NF (2) = 1dB (typ.), 10dB (max)
Complementary to 2SA1048.
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
50
50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
5
V
I
150
50
mA
mA
mW
°C
°C
C
Base current
I
B
JEDEC
JEITA
―
―
Collector power dissipation
Junction temperature
Storage temperature range
P
200
125
−55~125
C
T
j
TOSHIBA
2-4E1A
T
stg
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
⎯
⎯
⎯
⎯
0.1
0.1
μA
μA
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
h
FE
(Note)
DC current gain
V
= 6 V, I = 2 mA
70
⎯
700
CE
C
Collector-emitter saturation voltage
Transition frequency
V
I
= 100 mA, I = 10 mA
⎯
80
⎯
0.1
⎯
0.25
⎯
V
CE (sat)
C
B
f
V
V
V
= 10 V, I = 1 mA
MHz
pF
T
CE
CB
CE
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
2.0
3.5
ob
E
= 6 V, I = 0.1 mA, f = 1 kHz,
C
Noise figure
NF
⎯
1.0
10
dB
R
= 10 kΩ
g
Note: h classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
1
2007-11-01