Datasheet > 2SC2411K

2SC2411K

更新时间： 2024-11-18 12:53:39

品牌	Logo	应用领域
TYSEMI		信息通信管理
页数	文件大小	规格书
1页	64K
描述
High ICMax. ICMax. = 0.5A Low VCE(sat). Optimal for low voltage operation.

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2SC2411K 数据手册

Product specification

2SC2411K

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High ICMax. ICMax. = 0.5A

Low VCE(sat). Optimal for low voltage operation.

NPN silicon transistor

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

0.5

Collector current *

Collector power dissipation

Junction temperature

Storage temperature

0.2

150

Tstg

-55 to +150

* PC must not be exceeded.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC = 100ìA

IC = 1mA

IE = 100ìA

VCB = 20V

VEB = 4V

Emitter cutoff current

DC current gain

VCE = 3V, IC = 100mA

120

390

0.6

Collector-emitter saturation voltage

Output capacitance

VCE(sat) IC/IB = 500mA/50mA

Cob

VCB = 10V, IE = 0A, f = 1MHz

VCE = 5V, IE = -20mA, f = 100MHz

6.5

Transition frequency

250

MHz

hFE Classification

Marking

Rank

hFE

120 270

180 390

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