Datasheet > 2SC2406

2SC2406

更新时间： 2024-11-17 06:22:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	37K
描述
Silicon PNP Epitaxial Planar Type

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数据手册

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2SC2406 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxial Planar Type

2SC2406

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low noise voltage NV.

High forward current transfer ratio hFE.

Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing and the magazine packing.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

100

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC = 10 ìA, IE = 0

Min

Typ

0.7

Max

Unit

Collector-base voltage

V^CBO

V^CEO

V^EBO

V^BE

Collector-emitter voltage

Emitter-base voltage

IC = 2 mA, IB = 0

IE = 10 ìA, IC = 0

VCE = 1 V, IC = 100 mA

VCB = 10 V, IE = 0

VCE = 10 V, IB = 0

VCE = 5 V, IC = 2 mA

Base-emitter voltage

1.0

0.1

Collector-base cutoff current

Collector-emitter cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

I^CBO

I^CEO

h^FE

ìA

180

700

0.6

V^CE(sat)IC = 100 mA, IB = -10 mA

f^T

VCB = 5 V, IE = -2 mA, f = 200 MHz

V^CE= 10 V, IC = 1 mA, GV = 80 dB

R^g= 100 kÙ, Function = FLAT

200

110

MHz

Noise voltage

hFE Classification

Marking

h^FE

360 700

180 360

260 520

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