Datasheet > 2SC2383Y(TO-92MOD)

2SC2383Y(TO-92MOD)

更新时间： 2024-01-05 20:23:18

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江苏长电/长晶 - CJ		/
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描述
Transistor

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技术参数
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2SC2383Y(TO-92MOD) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC2383Y(TO-92MOD) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

TO-92MOD

2SC2383

TRANSISTOR (NPN)

FEATURE

1. EMITTER

2. COLLECTOR

3. BASE

High Voltage: V_CEO=160V

Large Continuous Collector Current Capability

Complementary to 2SA1013

MAXIMUM RATINGS (T^a=25 ℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

160

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

160

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.9

P_C

℃

T_J

150

T_stg

Storage Temperature

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

I_C= 100μA , I_E=0

I_C= 10mA, I_B=0

Min

160

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 10μA, I_C=0

V_CB=150V, I_E=0

μA

Collector cut-off current

I_CER

V_CB=150V,R_EB= 10MΩ

V_EB=6V, I_C=0

Emitter cut-off current

I_EBO

h_FE1

V_CE=5V, I_C=200mA

V_CE=5V, I_C=10mA

I_C=500m A, I_B=50mA

I_C=5mA, V_CE= 5V

V_CE=5V, I_C=200mA

320

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

0.75

Transition frequency

f _T

MHz

CLASSIFICATION OF h_FE1

Rank

Range

60-120

100-200

160-320

A,Jun,2011

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