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2SC2073U PDF预览

2SC2073U

更新时间: 2024-11-30 14:54:47
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 891K
描述
功率三极管

2SC2073U 数据手册

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2SC2073U  
NPN Silicon Epitaxial Planar Transistor  
General purpose amplifier and high voltage  
application  
Absolute Maximum Ratings (Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
160  
160  
7
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
Collector Current  
1
A
Peak Collector Current (Single pulse, tp = 300 μs)  
ICP  
2
A
0.51)  
1 2)  
Ptot  
W
Total Power Dissipation  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Tstg  
- 55 to + 150  
1) mounted on a ceramic substrate ( 250 mm2 x 0.8 t)  
2) mounted on a ceramic substrate ( 125 mm2 x 0.8 t)  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
2501)  
1252)  
Unit  
/W  
Thermal Resistance from Junction to Ambient  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 5  
Dated: 24/11/2021 Rev: 04  

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