Datasheet > 2SC2073U

2SC2073U

更新时间： 2024-10-31 14:54:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	891K
描述
功率三极管

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2SC2073U 数据手册

2SC2073U

NPN Silicon Epitaxial Planar Transistor

General purpose amplifier and high voltage

application

Absolute Maximum Ratings (T_a= 25

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

160

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current (Single pulse, t_p= 300 μs)

I_CP

0.5¹⁾

1 ²⁾

P_tot

Total Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

¹⁾mounted on a ceramic substrate ( 250 mm²x 0.8 t)

²⁾mounted on a ceramic substrate ( 125 mm²x 0.8 t)

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250¹⁾

125²⁾

Unit

Thermal Resistance from Junction to Ambient

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

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Dated: 24/11/2021 Rev: 04

12 3 4 5

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