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2SC2060 PDF预览

2SC2060

更新时间: 2023-12-06 20:10:56
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 696K
描述
双极型晶体管

2SC2060 技术参数

极性:NPNCollector-emitter breakdown voltage:32
Collector Current - Continuous:1DC current gain - Min:80
DC current gain - Max:400Transition frequency:50
Package:TO-92LStorage Temperature Range:-55-150
class:Transistors

2SC2060 数据手册

 浏览型号2SC2060的Datasheet PDF文件第2页 
2SC2060  
TO-92MOD Transistor (NPN)  
TO-92MOD  
5.800  
6.200  
1. EMITTER  
1
2
3
2. COLLECTOR  
3. BASE  
8.400  
8.800  
0.900  
1.100  
0.400  
0.600  
Features  
13.800  
14.200  
—
—
—
Power dissipation PCM: 0.75 W (Tamb=25)  
Low saturation voltage (VCE(sat)=0.15V at 500mA)  
Complementary pair with 2SA934  
1.500 TYP  
2.900  
3.100  
0.000  
0.380  
1.600  
0.400  
0.500  
4.700  
5.100  
1.730  
2.030  
4.000  
MAXIMUM RATINGS* TA=25unless otherwise noted  
Dimensions in inches and (millimeters)  
Symbol  
Parameter  
Value  
40  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
32  
V
5
V
Collector Current -Continuous  
Total Device Dissipation  
Junction Temperature  
1
A
PD  
750  
150  
-55-150  
mW  
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
40  
32  
5
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 100μA , IE=0  
IC= 1mA , IB=0  
IE= 100μA, IC=0  
VCB=20V , IE=0  
V
V
V
0.5  
0.1  
400  
0.4  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=4V ,  
IC=0  
DC current gain  
hFE(1)  
VCE=3V, IC= 100mA  
IC= 500m A, IB= 50mA  
VCE=5V, IE=-50mA  
VCB=10V,IE=0,f=1MHz  
80  
50  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
MHz  
pF  
Collector output capacitance  
Cob  
30  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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