Datasheet > 2SC2001

2SC2001

更新时间： 2023-12-06 20:10:36

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	628K
描述
双极型晶体管

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数据手册

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2SC2001 数据手册

2SC2001(NPN)

TO-92 Bipolar Transistors

TO-92

1. EMITTER

COLLECTOR

3. BASE

Features

High h_FEand low V_CE(sat)

ꢀ

h_FE(I_C=100mA) : 200(Typ)

V_CE(sat)(700mA): 0.2V (Typ)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

700

600

150

-55-150

℃

P_C

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=10mA , I_B=0

V_(BR)EBOI_E=100µA, I_C=0

I_CBO

I_CEO

I_EBO

V_CB=30 V, I_E=0

V_CE=20 V, I_B=0

V_EB=5 V, I_C=0

0.1

400

0.6

1.2

µA

Collector cut-off current

Emitter cut-off current

h_FE

V_CE(sat)

V_BE(sat)

DC current gain

V_CE=1V, I_C=100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

I_C=700mA, I_B= 70mA

I_C= 700mA, I_B=70mA

_CE=6V, I_C= 10mA

Transition frequency

f _T

MHz

f = 30MHz

CLASSIFICATION OF h_FE

Rank

Range

90-180

135-270

200-400

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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