Datasheet > 2SC2001

2SC2001

更新时间： 2024-11-20 07:30:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	474K
描述
NPN Plastic Encapsulated Transistor

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2SC2001 数据手册

2SC2001

0.7 A , 30 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES



High h_FEand low V_CE(sat)

h_FE(I_C=100mA)：200(Typ)

_CE(sat)(700mA)：0.2V(Typ)

Emitter

Collector

Base

CLASSIFICATION OF h_FE

Millimeter

REF.

Product-Rank

2SC2001-M

2SC2001-L

135~270

2SC2001-K

200~400

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Range

90~180

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

0.7

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

P_C

0.6

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100μA, I_E=0

I_C=10mA, I_B=0

I_E=100μA, I_C=0

V_CB=30V, I_E=0

0.1

400

0.6

1.2

μA

I_CEO

V_CE=20V, I_B=0

I_EBO

V_EB=5V, I_C=0

DC Current Gain

h_FE

V_CE=1V, I_C=100mA

I_C=700mA, I_B=70mA

Collector to Emitter Saturation Voltage

Base to Emitter voltage

V_CE(sat)

V_BE(sat)

f_T

Transition Frequency

MHz V_CE=6V, I_C=10mA, f=30MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Feb-2011 Rev. A

Page 1 of 2

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