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2SC2001

更新时间： 2024-11-20 03:56:31

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	59K
描述
Plastic-Encapsulated Transistors

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中文翻译

获取价格

数据手册

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2SC2001 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

2SC2001

TRANSISTOR (NPN)

TO-92

FEATURES

Power dissipation

P_CM

Collector current

I_CM

Collector-base voltage

V_(BR)CBO

0.6 W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

0.7

3. BASE

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA , I_E=0

I_C=10mA , I_B=0

I_E=100µA, I_C=0

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=30 V , I_E=0

V_CE=20 V , I_B=0

V_EB=5 V , I_C=0

0.1

400

0.6

1.2

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE

DC current gain

V_CE=1V, I_C=100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=700mA, I_B= 70mA

I_C= 700mA, I_B=70mA

V_CE=6V, I_C= 10mA

Transition frequency

MHz

f _T

f = 30MHz

CLASSIFICATION OF h_FE

Rank

Range

90-180

135-270

200-400

中文翻译

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