Datasheet > 2SC1984L

2SC1984L

更新时间： 2024-11-20 06:17:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	169K
描述
NPN Silicon General Purpose Transistor

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数据手册

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2SC1984L 数据手册

2SC1383L/2SC1384L

NPN Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92L

4.9±0.2

3.9 0.2

FEATURE

Power dissipation

1.0±0.1

P_CM

1 W (Tamb=25℃)

Collector current

I_CM:

1 A

Collector-base voltage

V_(BR)CBO2SC1383L: 30 V

2SC1384L: 60 V

+0.05

–0.05

0.40

+0.1

–0.1

0.45

(1.27 Typ.)

Operating and storage junction temperature range

1: Emitter

2: Collector

3: Base

+0.R2

1.4

–0.2

2 3

T_{J, Tstg: -55℃ to +150℃}

2.54 0.1

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

2SC1383L

2SC1384L

2SC1383L

2SC1384L

V(BR)_CBO

Ic= 10µA , I_E=0

Collector-emitter breakdown voltage

V(BR)_CEO

I_C=2mA , I_B=0

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_EBO

I_CBO

I_E= 10µA, I_C=0

V_CB=20V , I_E=0

0.1

µA

h_FE(1)

V_CE=10 V, I_C= 500mA

V_CE=5 V, I_C= 1A

340

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C= 500m A, I_B=50mA

I_C= 500mA , I_B= 50mA

0.4

1.2

Transition frequency

_CE= 10 V, I_C= 50mA

100

MHz

f _T

CLASSIFICATION OF h^FE

(1)

Rank

Range

85-170

120-240

170-340

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

中文翻译

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