Datasheet > 2SC1980T

2SC1980T

更新时间： 2024-11-19 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 20MA I(C) \| TO-92

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2SC1980T 数据手册

Transistor

2SC1980

Silicon NPN epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SA0921 (2SA921)

Unit: mm

4.0 0.2

5.0 0.2

Features

High collector to emitter voltage V_CEO

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

120

1.27

˚C

1 2 3

1:Emitter

I_C

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

Collector power dissipation

Junction temperature

Storage temperature

P_C

250

2.54 0.15

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 50_V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 50V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

120

_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 5V, I_C= 2mA

180

700

0.6

Collector to emitter saturation voltage V_CE(sat)

I_C= 20mA, I_B= 2mA

Transition frequency

f_T

V_CB= 5V, I_E= –2mA, f = 200MHz

V_CE= 40V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

200

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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