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2SC1972

更新时间： 2024-11-20 07:30:31

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	59K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册
替代型号

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2SC1972 数据手册

2SC1972

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI 2SC1972 is Designed for RF

power amplifiers on VHF band mobile

radio applications.

FEATURES INCLUDE:

PACKAGE STYLE TO-220AB (COMMON EMITTER)

•

Replaces Original 2SC1972 in

Most Applications

High Gain Reduces Drive

Requirements

Economical TO-220CE Package

MAXIMUM RATINGS

3.5 A

I_C

35 V

V_CBO

P_DISS

T_STG

25 W @ T_C= 25 °C

-55 °C to +175 °C

6.0 °C/W

1 = BASE

2 = EMITTER

3 = COLLECTOR TAB = EMITTER

θ_JC

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CEO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 10 mA

I_E= 10 mA

BV_CBO

BV_EBO

I_CBO

4.0

V_CES= 25 V

V_EB= 3.0 V

V_CE= 10 V

100

500

180

µA

---

I_EBO

I_C= 100 mA

P_IN= 2.5 W

h_FE

η_C

P_OUT

V_CC= 13.5 V

f =175 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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2SC1972 替代型号

型号	品牌	替代类型	描述	数据表
NTE343	NTE	功能相似	Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)

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