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2SC1959-BP PDF预览

2SC1959-BP

更新时间: 2024-11-20 19:49:23
品牌 Logo 应用领域
美微科 - MCC 开关晶体管
页数 文件大小 规格书
3页 111K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

2SC1959-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.45最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SC1959-BP 数据手册

 浏览型号2SC1959-BP的Datasheet PDF文件第2页浏览型号2SC1959-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2SC1959  
Micro Commercial Components  
Features  
Audio frequency low power amplifier applications, driver stage  
Power Silicon  
NPN Transistor  
amplifier applications, switching applications  
Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA  
1 Watt Amplifier applications  
Complementary to 2SA562TM.  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
TO-92  
x
Marking: C1959  
A
E
Maximum Ratings  
B
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Voltage  
Rating  
30  
35  
5.0  
500  
100  
500  
-55 to +150  
-55 to +150  
Unit  
V
V
V
Collector Current  
mA  
mA  
mW  
OC  
OC  
IB  
Base Current  
PC  
TJ  
TSTG  
Collector Power Dissipation  
Operating Junction Temperature  
Storage Temperature  
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
OFF CHARACTERISTICS  
ICBO  
Collector-Base Cutoff Current  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
D
(VCB=35Vdc, I =0)  
E
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
C
B
E
ON CHARACTERISTICS  
hFE-1  
hFE-2  
VCE(sat)  
VBE  
DC Current Gain*  
70  
--- 400  
---  
---  
(I =100mAdc, VCE=1.0Vdc)  
C
G
DC Current Gain*  
25  
---  
---  
0.1  
0.8  
300  
----  
0.25  
1.0  
(I =400mAdc, VCE=6.0Vdc)  
C
Collector-Emitter Saturation Voltage  
DIMENSIONS  
Vdc  
Vdc  
(I =100mAdc, IB=10mAdc)  
C
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
Base-Emitter Voltage  
---  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
(I =100mAdc, VCE=1.0Vdc)  
C
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
fT  
Transition Frequency  
200  
---  
---  
MHZ  
pF  
(VCE=6.0Vdc, I =20mAdc)  
C
COBO  
Collector Output Capacitance  
E
G
--- 7.0  
(VCB=6.0Vdc, I =0, f=1.0MHZ)  
E
Note: hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400  
hFE(1) Classification O: 25 (Min.), Y: 40 (Min.)  
www.mccsemi.com  
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Revision: 4  
2006/05/16  

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