Datasheet > 2SC1959

2SC1959

更新时间： 2024-11-21 14:55:47

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	240K
描述
小信号晶体管

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2SC1959 数据手册

2SC1959

NPN Silicon Epitaxial Planar Transistor

Features

• The transistor is subdivided into three groups, O,

Y and G, according to its DC current gain

• On special request, these transistors can be

manufactured in different pin configurations

Applications

• For switching, driver stage and audio frequency

low power amplifier applications

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

500

℃

Base Current

I_B

100

Power Dissipation

P_tot

500

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250

Unit

Thermal Resistance from Junction to Ambient

℃/W

1 / 5

Dated: 17/06/2022 Rev: 02

12 3 4 5

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2SC1959-GR-AP	MCC	获取价格	暂无描述
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