Datasheet > 2SC1953Q

2SC1953Q

更新时间： 2024-11-23 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 50MA I(C) \| TO-126

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中文翻译

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数据手册

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2SC1953Q 数据手册

Power Transistors

2SC1953

Silicon NPN epitaxial planar type

Unit: mm

+0.5

–0.1

For low-frequency power pre-amplification

Complementary to 2SA0914 (2SA914)

8.0

3.2 0.2

φ 3.16 0.1

I Features

•

High collector to emitter voltage V_CEO

Small collector output capacitance C_ob

A complementary pair with 2SA0914, is optimum for the pre-driver

stage of a 60 W to 100 W output amplifier

TO-126B package which requires no insulation plate for installa-

tion to the heat sink

•

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

I Absolute Maximum Ratings T_C= 25°C

1 : Emitter

2 : Collector

3 : Base

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

150

TO-126B Package

150

100

I_C

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

1.2

T_j

150

°C

T_stg

−55 to +150

Note) : Without heat sink

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

Collector cutoff current

V_CB= 100 V, I_E= 0

I_C= 100 µA, I_B= 0

I_E= 10 µA, I_C= 0

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

h_FE

150

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Transition frequency

V_CE= −5 V, I_C= 10 mA

I_C= 30 mA, I_B= 3 mA

130

330

V_CE(sat)

f_T

MHz

V_CB= 10 V, I_E= −10 mA, f = 200 MHz

Collector output capacitance

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

Note) : Rank classification

Rank

h_FE

130 to 220 185 to 330

Note) The part number in the parenthesis shows conventional part number.

12 3

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